HM3407 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V D G S Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

H&M Semiconductor

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Datasheet Details

Part number	HM3407
Manufacturer	H&M Semiconductor
File Size	484.25 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM3407 Datasheet
Additional preview pages of the HM3407 datasheet.

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HM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.

Published: Nov 27, 2018 |