HM3400D Datasheet PDF - H&M Semiconductor N-Channel Enhancement Mode Power MOSFET Specs

HM3400D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 30V,ID = 5.0A RDS(ON) < 52mΩ @ VGS=2.5V RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 32mΩ @ VGS=10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3400D Marking and pin Assignment.

Datasheet Details

Part number	HM3400D
Manufacturer	H&M Semiconductor
File Size	393.24 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3400D Datasheet
Additional preview pages of the HM3400D datasheet.

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Full PDF Text Transcription

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HM3400D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 30V,ID = 5.0A RDS(ON) < 52mΩ @ VGS=2.5V RDS(ON) < 36mΩ @ VGS=4.

Published: Nov 27, 2018 |