HM3401B Datasheet PDF (P-Channel Enhancement Mode Power MOSFET)

HM3401B - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

Datasheet Details

Part number	HM3401B
Manufacturer	H&M Semiconductor
File Size	379.06 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM3401B Datasheet
Additional preview pages of the HM3401B datasheet.

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Full PDF Text Transcription

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HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.

Published: Nov 27, 2018 |