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HM3401 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number HM3401
Manufacturer H&M Semiconductor
File Size 467.85 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3401 Datasheet
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HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.
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