HM2N25MR - 250V N-Channel Enhancement Mode MOSFET

H&M Semiconductor

Description

The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 250V,ID =2A RDS(ON) < 1500mΩ @ VGS=10V (Typ:1300mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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HM2N25MR 250v n-channel enhancement mode mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM2N25MR
Manufacturer	H&M Semiconductor
File Size	946.40 KB
Description	250V N-Channel Enhancement Mode MOSFET
Datasheet	HM2N25MR Datasheet

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Full PDF Text Transcription

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HM2N25MR 250V N-Channel Enhancement Mode MOSFET Description The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jun 21, 2025 |