Datasheet4U Logo Datasheet4U.com

HM2N20R - N-Channel Enhancement Mode Power MOSFET

Description

The HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

📥 Download Datasheet

Datasheet Details

Part number HM2N20R
Manufacturer H&M Semiconductor
File Size 866.45 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2N20R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM2007 Speech recognition HMC
HM200WD1-100 TFT LCD BOE
HM20N120AB IGBT H&M semi
HM20N120T IGBT H&M semi
HM20N120TB IGBT H&M semi

Other Datasheets by H&M Semiconductor

Part Number Description
HM2N20 N-Channel Enhancement Mode Power MOSFET
HM2N20MR 200V N-Channel Enhancement Mode MOSFET
HM2N20PR N-Channel Enhancement Mode Power MOSFET
HM2N25MR 250V N-Channel Enhancement Mode MOSFET
HM2N10 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode Power MOSFET Description The HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Published: |