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HM2N10 - N-Channel Enhancement Mode Power MOSFET

Description

The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID = 2A RDS(ON).

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Datasheet Details

Part number HM2N10
Manufacturer H&M Semiconductor
File Size 275.30 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2N10 Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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