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HM2N20MR - 200V N-Channel Enhancement Mode MOSFET

Description

The HM2N20MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 200V,ID =2A RDS(ON) < 1800mΩ @ VGS=10V (Typ:1400mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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Datasheet Details

Part number HM2N20MR
Manufacturer H&M Semiconductor
File Size 937.04 KB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HM2N20MR Datasheet

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Full PDF Text Transcription

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HM2N20MR 200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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