HM2819D - Dual P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM2819D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -40V,ID = -5.0A RDS(ON).

H&M Semiconductor

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Datasheet Details

Part number	HM2819D
Manufacturer	H&M Semiconductor
File Size	566.86 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2819D Datasheet
Additional preview pages of the HM2819D datasheet.

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HM2819D Dual P-Channel Enhancement Mode Power MOSFET Description The HM2819D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -40V,ID = -5.0A RDS(ON) <135mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.

Published: Jul 1, 2025 |