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HM2809D - 60V P-Channel power field effect transistors

Datasheet Summary

Description

The HM2809D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦188mΩ@VGS=-10V.
  • RDS(ON)≦266mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

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Datasheet preview – HM2809D

Datasheet Details

Part number HM2809D
Manufacturer H&M Semiconductor
File Size 1.01 MB
Description 60V P-Channel power field effect transistors
Datasheet download datasheet HM2809D Datasheet
Additional preview pages of the HM2809D datasheet.

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HM2809D P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2809D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦188mΩ@VGS=-10V ● RDS(ON)≦266mΩ@VGS=-4.
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