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HM2800D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM2800D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • VDS = 20V,ID = 5.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D1 D2 G1 G2 S1 S2 Schematic diagram DFN 2x2 Package S1 G1 D2 Pin 1.

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Datasheet Details

Part number HM2800D
Manufacturer H&M Semiconductor
File Size 653.56 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2800D Datasheet
Additional preview pages of the HM2800D datasheet.

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HM2800D N-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 5.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.
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