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HM10N80A
General Description：
VDSS
800
HM10N80A, the silicon N-channel Enhanced
ID
10
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
60
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.72
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P,
which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of PC POWER.
HM10N80A Datasheet
