HM10N15D - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

The HM10N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 150V,ID =10A RDS(ON).

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HM10N15D n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM10N15D
Manufacturer	H&M Semiconductor
File Size	551.89 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM10N15D Datasheet

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Full PDF Text Transcription

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HM10N15D N-Channel Enhancement Mode Power MOSFET Description The HM10N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID =10A RDS(ON) <75mΩ @ VGS=10V (Typ:62mΩ) RDS(ON) <80mΩ @ VGS=4.

Published: Jul 1, 2025 |