Datasheet4U Logo Datasheet4U.com

HM10N10K - N-Channel Enhancement Mode Power MOSFET

Description

The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM100N06P 60V N-Channel MOSFET HKZ
HM10414 256 x 1-Bit Fully Vecoded RAM Hitachi
HM10414-1 256 x 1-Bit Fully Vecoded RAM Hitachi
HM10422 256 x 4-Bit Fully Vecoded RAM Hitachi
HM10470-20 4K x 1-Bit Fully Vecoded RAM Hitachi

Other Datasheets by H&M Semiconductor

Part Number Description
HM10N15D N-Channel Enhancement Mode Power MOSFET
HM10N60 600V N-Channel MOSFET
HM10N60F 600V N-Channel MOSFET
HM10N65D 650V N-Channel MOSFET
HM10N65F 650V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =100V,ID =9.
Published: |