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HM10N60F - 600V N-Channel MOSFET

Download the HM10N60F datasheet PDF. This datasheet also covers the HM10N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V.
  • Low gate charge ( typical 48nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM10N60-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM10N60 600V N-Channel MOSFET
HM10N65D 650V N-Channel MOSFET
HM10N65F 650V N-Channel MOSFET
HM10N10K N-Channel Enhancement Mode Power MOSFET
HM10N15D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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HM10N60 / HM10N60F +010N60 / +010N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 10.0A, 600V, RDS(on) = 0.
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