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HM10N65F - 650V N-Channel MOSFET

Download the HM10N65F datasheet PDF. This datasheet also covers the HM10N65D variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 10A, 650V, RDS(on) = 1.09Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D TO-263-2L G D S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM10N65D-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM10N65D 650V N-Channel MOSFET
HM10N60 600V N-Channel MOSFET
HM10N60F 600V N-Channel MOSFET
HM10N10K N-Channel Enhancement Mode Power MOSFET
HM10N15D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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HM10N65D / HM10N65F HM10N65D / HM10N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 10A, 650V, RDS(on) = 1.
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