Datasheet Details
| Part number | GSM6907Z |
|---|---|
| Manufacturer | Globaltech |
| File Size | 565.38 KB |
| Description | 60V P-Channel MOSFETs |
| Datasheet |
 GSM6907Z Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -60V, -14A, RDS(ON)=65mΩ@VGS=-10V.
- Fast switching.
- Suit for -1.8V Gate Drive.