GSM6601 - MOSFET

Product Overview

Globaltech

Part number	GSM6601
Manufacturer	Globaltech
File Size	1.46 MB
Description	MOSFET
Datasheet	GSM6601 Datasheet
Additional preview pages of the GSM6601 datasheet.

GSM6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON)=74mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=90mΩ@VGS=2.5V.
P-Channel -30V/-2.6A,RDS(ON)=115mΩ@VGS=-10V -30V/-2.0A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=235mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TSOP-6 package design.

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Published: Sep 9, 2018 |