GSM02N15
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
- 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V
- Improved dv/dt capability
- TSOP-6 package design
Applications
- Portable Equipment
- Battery Powered System
- Load Switch
Packages & Pin Assignments
GSM02N15TSF (TSOP-6)
Pin
Symbo l
1D
2D
3G
4S
5D
6D
Description
Drain Drain Gate Source Drain Drain
.gs-power. 1
Ordering Information
GS P/N
GSM02N15 TS F
Package Code Pb Free Code
Part Number
GSM02N15TSF
Package
TSOP-6
Quantity Reel
3000 PCS
Marking Information
Absolute Maximum Ratings
TA=25ºC Unless otherwise...
