GSM02P15JZF
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Features
- -150V/-1A,RDS(ON)=750mΩ@VGS=-1V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Applications
- Networking
- Load Switch
- LED applications
Packages & Pin Assignments
GSM02P15JZF (SOT-23-3L)
Pin Description
1 Gate 2 Source 3 Drain
Ordering Information
Part Number
Package
SOT-23-3L
Quantity Reel
3000 PCS
.gs-power. 1
Marking Information
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDS VGS
TJ TSTG
Parameter
Drain-Source...
