Datasheet4U.com

GT120N10 - MOSFET

Product Overview

📥 Download Datasheet

GT120N10 MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT120N10

Datasheet Details

Part number	GT120N10
Manufacturer	GOFORD
File Size	2.00 MB
Description	MOSFET
Datasheet	GT120N10 Datasheet
Additional preview pages of the GT120N10 datasheet.

Product details

Description

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A.
Excellent gate charge x RDS(on) product.
Very low on-resistance RDS(on).
175 °C operating temperature.
RoHS Compliant.
100% UIS tested.

📁 Similar Datasheet

GT1216 - Multi-Function EVB (Longsys)
GT10 - Programmable Display (NAiS)
GT100DA120U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
GT100DA60U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
GT100LA120UX - IGBT (Vishay Siliconix)
GT100NA120UX - IGBT (Vishay Siliconix)
GT100PI120T6H-T4M - IGBT (NJSME)
GT101 - PCB to Wire Connector (ANN REN)

Other Datasheets by GOFORD

GT125N10 - MOSFET
GT1003B - MOSFET
GT105N10 - N-Channel Enhancement Mode Power MOSFET
GT105N10F - N-Channel Enhancement Mode Power MOSFET
GT105N10K - N-Channel Enhancement Mode Power MOSFET
GT105N10T - N-Channel Enhancement Mode Power MOSFET

Published: Nov 14, 2024 |