• Part: GT100PI120T6H-T4M
  • Description: IGBT
  • Manufacturer: NJSME
  • Size: 389.71 KB
Download GT100PI120T6H-T4M Datasheet PDF
NJSME
GT100PI120T6H-T4M
Features : - Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, pliant with Ro HS Requirement Applications: - Industrial Inverters - Servo Applications IGBT, Inverter Maximum Rated Values(TC=25℃unless otherwise specified) VCES VGES ICM t SC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC=100℃ TC=25℃ TJ=175℃ TC=25℃ TJmax=175℃ ±20 >10 μs .njsme. 2019 NJSME All rights reserved Page 1 REV.B 09/12/2019 Electrical Characteristics of IGBT (TC=25℃unless otherwise specified) Static Characteristics Symbol Description Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation...