GT105N10F Datasheet Text
GT105N10F
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS pliant
100V 25A < 10.5mΩ < 15mΩ
Schematic diagram
Application l Synchronous Rectification in SMPS or LED Driver l UPS l Motor Control l BMS l High Frequency Circuit
TO-220F
Device GT105N10F
Package TO-220F
Marking GT105N10
Packaging...