• Part: GT125N10
  • Description: MOSFET
  • Manufacturer: GOFORD
  • Size: 3.85 MB
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GT125N10 Datasheet Text

GOFORD GT125N10 - General Description GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in motor control applications. Features - Low RDS(on) & FOM - Extremely low switching loss - Excellent stability and uniformity - Fast switching and soft recovery - RoHS pliant VDSS RDS(ON) ID @10V (Typ.) 100V 4.1 mΩ 130A Applications - Consumer electronic power supply - Motor control - Synchronous-rectification - Isolated DC/DC convertor - Invertors - Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT TOP VIEW TO-263 - Ordering Information Part Number GT125N10T GT125N10M GT125N10F Marking GT125N10 GT125N10 GT125N10 Case TO-220 TO-263 TO-220F Packaging 50pcs/Tube 800pcs/Reel 50pcs/Tube HTTP://.gofordsemi. TEL:0755-29961262 FAX:0755-29961466...