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G60N04 Datasheet MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G60N04
Manufacturer GOFORD
File Size 1.29 MB
Description MOSFET
Datasheet download datasheet G60N04 Datasheet

General Description

The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 mΩ 9.7 mΩ 60A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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