G60N06T Datasheet Text
G60N06T
N-Channel Enhancement Mode Power MOSFET
Description
The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- 100% Avalanche Tested
- RoHS pliant
60V 50A < 17mΩ < 21mΩ
Application
- Power switch
- DC/DC converters
Schematic diagram Marking and pin assignment
Device G60N06T
Package TO-220
Marking...