G60N06 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G60N06 datasheet PDF. This datasheet also includes the G60N06T variant, as both parts are published together in a single manufacturer document.

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G60N06 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G60N06T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G60N06
Manufacturer	GOFORD
File Size	773.76 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G60N06 Datasheet

General Description

The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G60N06T N-Channel Enhancement Mode Power MOSFET.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 60V 50A < 17mΩ < 21mΩ.

More Datasheets from GOFORD

Part Number	Description
G60N06T	N-Channel Enhancement Mode Power MOSFET
G60N04	MOSFET
G60N04	N-Channel Enhancement Mode Power MOSFET
G60N04D52	Dual N-Channel Enhancement Mode Power MOSFET
G60N04K	N-Channel Enhancement Mode Power MOSFET
G60N10	N-Channel Enhancement Mode Power MOSFET
G60N10T	N-Channel Enhancement Mode Power MOSFET