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G60N10 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G60N10 datasheet PDF. This datasheet also includes the G60N10T variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G60N10T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G60N10
Manufacturer GOFORD
File Size 1.02 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G60N10 Datasheet

General Description

The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G60N10T N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 60A < 17mΩ < 19mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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