G60N100 Datasheet NPT IGBT

Manufacturer: Fairchild (now onsemi)

Download the G60N100 datasheet PDF. This datasheet also includes the G60N100BNTD variant, as both parts are published together in a single manufacturer document.

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G60N100 npt igbt by Fairchild (now onsemi) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G60N100BNTD-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G60N100
Manufacturer	Fairchild (now onsemi)
File Size	417.80 KB
Description	NPT IGBT
Datasheet	G60N100 Datasheet

General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device offers the optimum performance for hard switching application such as UPS, welder applications.

GCE TO-264 3L Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp.

Overview

FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench.

Key Features

High Speed Switching.
Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A.
High Input Impedance.
Built-in Fast Recovery Diode.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	G60N100CE	TSG60N100CE	Taiwan Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number	Description
G60N100BNTD	NPT IGBT