G30N04 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G30N04 datasheet PDF. This datasheet also includes the G30N04D3 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

G30N04 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G30N04D3-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G30N04
Manufacturer	GOFORD
File Size	727.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G30N04 Datasheet

General Description

The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G30N04D3 N-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 40V 30A < 9mΩ < 12mΩ Schematic diagram pin assignment.

More Datasheets from GOFORD

Part Number	Description
G30N04D3	N-Channel Enhancement Mode Power MOSFET
G30N02	N-Channel MOSFET
G30N03	N-Channel Trench MOSFET
G30N03D3	N-Channel Trench MOSFET
G300N04	N-Channel Enhancement Mode Power MOSFET
G300N04D3	N-Channel Enhancement Mode Power MOSFET
G300N04L	N-Channel Enhancement Mode Power MOSFET
G300P06	P-Channel Enhancement Mode Power MOSFET
G300P06T	P-Channel Enhancement Mode Power MOSFET
G3035	N-Channel MOSFET