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G30N02 Datasheet N-Channel MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G30N02
Manufacturer GOFORD
File Size 1.63 MB
Description N-Channel MOSFET
Datasheet download datasheet G30N02 Datasheet

General Description

The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD.

Key Features

  • VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.
  • RoHS Compliant.

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