G300N04 Datasheet Text
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
40V 5A < 35mΩ < 45mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G300N04L
Package SOT-23-3L
Marking G300N04
SOT-23-3L
Packaging...