G300P06 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G300P06 datasheet PDF. This datasheet also includes the G300P06T variant, as both parts are published together in a single manufacturer document.

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G300P06 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G300P06T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G300P06
Manufacturer	GOFORD
File Size	971.34 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G300P06 Datasheet

General Description

The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G300P06T P-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -40A < 30mΩ Schematic diagram.

More Datasheets from GOFORD

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G30N04	N-Channel Enhancement Mode Power MOSFET