G170P06S Datasheet Text
G170P06S
P-Channel Enhancement Mode Power MOSFET
Description
The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS pliant
-60V -12A < 17mΩ
Schematic diagram
Application l Power switch l DC/DC converters pin assignment
Ordering Information
Device G170P06S
Package SOP-8
Marking G170P06
SOP-8
Packaging...