G170P06 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G170P06 datasheet PDF. This datasheet also includes the G170P06S variant, as both parts are published together in a single manufacturer document.

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G170P06 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G170P06S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G170P06
Manufacturer	GOFORD
File Size	0.99 MB
Description	P-Channel Enhancement Mode Power MOSFET
Download	G170P06 Download (PDF)

General Description

The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G170P06S P-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -12A < 17mΩ Schematic diagram.

More Datasheets from GOFORD

Part Number	Description
G170P06M	P-Channel Enhancement Mode Power MOSFET
G170P06S	P-Channel Enhancement Mode Power MOSFET
G170P03	P-Channel Enhancement Mode Power MOSFET
G170P03D3	P-Channel Enhancement Mode Power MOSFET