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G170P06M Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G170P06M
Manufacturer GOFORD
File Size 0.97 MB
Description P-Channel Enhancement Mode Power MOSFET
Download G170P06M Download (PDF)

General Description

The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G170P06M P-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -65A < 17mΩ Schematic diagram.

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