G170P03 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G170P03 datasheet PDF. This datasheet also includes the G170P03D3 variant, as both parts are published together in a single manufacturer document.

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G170P03 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G170P03D3-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G170P03
Manufacturer	GOFORD
File Size	668.61 KB
Description	P-Channel Enhancement Mode Power MOSFET
Download	G170P03 Download (PDF)

General Description

The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G170P03D3 P-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -30V -20A < 15mΩ < 21mΩ.

More Datasheets from GOFORD

Part Number	Description
G170P03D3	P-Channel Enhancement Mode Power MOSFET
G170P06	P-Channel Enhancement Mode Power MOSFET
G170P06M	P-Channel Enhancement Mode Power MOSFET
G170P06S	P-Channel Enhancement Mode Power MOSFET