G05NP10S Datasheet Text
GOFORD
N and P Channel Enhancement Mode Power MOSFET
Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- NMOS
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
100V 5A < 170mΩ
< 180mΩ
Schematic diagram
- PMOS
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
-100V -6A < 200mΩ
- 100% Avalanche Tested
- RoHS pliant
Marking and pin assignment
Application
- Power switch
- DC/DC converters
SOP-8
Device G05NP10S
Package SOP-8双基
Marking G05NP10
Packaging...