Datasheet4U Logo Datasheet4U.com

G05NP10S Datasheet N- and P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

📥 Download Datasheet

Datasheet Details

Part number G05NP10S
Manufacturer GOFORD
File Size 571.03 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP10S Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Overview

GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
  • PMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant Marking and pin assignment.

More Datasheets from GOFORD

Part Number Description
G05NP10 N- and P-Channel Enhancement Mode Power MOSFET
G05NP06 N and P Channel Enhancement Mode Power MOSFET
G05NP06S2 N and P Channel Enhancement Mode Power MOSFET
G050N06LL N-Channel Enhancement Mode Power MOSFET
G050P03 P-Channel Enhancement Mode Power MOSFET
G050P03K P-Channel Enhancement Mode Power MOSFET
G050P03S P-Channel Enhancement Mode Power MOSFET
G050P03T P-Channel Enhancement Mode Power MOSFET
G05P06 P-Channel Enhancement Mode Power MOSFET
G05P06L P-Channel Enhancement Mode Power MOSFET