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G05NP06S2 Datasheet N and P Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G05NP06S2
Manufacturer GOFORD
File Size 1.01 MB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP06S2 Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Overview

GOFORD G05NP06S2 N and P Channel Enhancement Mode Power MOSFET.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram Marking and pin assignment.

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