G05NP06S2 Datasheet Text
GOFORD
N and P Channel Enhancement Mode Power MOSFET
Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- NMOS
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
60V 5A < 36mΩ
< 40mΩ
- PMOS
- VDS
- ID (at VGS = -10V)
- RDS(ON) (at VGS = -10V)
- RDS(ON) (at VGS = -4.5V)
- RoHS pliant
-60V -3.1A < 80mΩ < 95mΩ
Schematic diagram Marking and pin assignment
Application
- Power switch
- DC/DC converters
SOP-8
Device G05NP06S2
Package SOP-8双基
Marking G05NP06
Packaging...