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G05NP10 Datasheet N- and P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G05NP10 datasheet PDF. This datasheet also includes the G05NP10S variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G05NP10S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G05NP10
Manufacturer GOFORD
File Size 571.03 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP10 Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Overview

GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram.
  • PMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant Marking and pin assignment.

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