G050N06LL Datasheet Text
G050N06LL
N-Channel Enhancement Mode Power MOSFET
Description
The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
60V 5A < 45mΩ < 50mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G050N06LL
Package SOT-23-6
Marking...