G050P03T Datasheet Text
P-Channel Enhancement Mode Power MOSFET
Description
The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS pliant
-30V -85A < 5mΩ < 6.5mΩ
Schematic diagram
Application l Power switch l DC/DC converters
TO-220
Ordering Information
Device G050P03T
Package TO-220
Marking G050P03
Packaging...