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HGTG27N120BN - N-Channel IGBT

Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.

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Datasheet Details

Part number HGTG27N120BN
Manufacturer Fairchild Semiconductor
File Size 212.11 KB
Description N-Channel IGBT
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HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49280. Features • 72A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . .
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