FDMC7664 Datasheet Text
FDMC7664 N-Channel PowerTrench® MOSFET
FDMC7664
N-Channel PowerTrench® MOSFET
30 V, 18.8 A, 4.2 mΩ
June 2014
Features
General Description
- Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A
- Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Applications
- DC
- DC Buck Converters
- Notebook battery power management
- Load switch in Notebook
Top
Bottom
Pin 1
S SG S
MLP 3.3x3.3
D D D D
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter...