FDMC7672 Datasheet Text
FDMC7672 N-Channel Power Trench® MOSFET
June 2014
FDMC7672
N-Channel Power Trench® MOSFET
30 V, 16.9 A, 5.7 mΩ
Features
General Description
- Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A
- Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Application
- DC
- DC Buck Converters
- Notebook battery power management
- Load switch in Notebook
Top Bottom
Pin 1
SS S G
MLP 3.3x3.3
D D D D
S S S G
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage...
