FDMC7672 Datasheet Text
MOSFET
- N-Channel, POWERTRENCH)
30 V, 16.9 A, 5.7 mW
FDMC7672
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A
- Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15.0 A
- High Performance Technology for Extremely Low RDS(on)
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Buck Converters
- Notebook Battery Power Management
- Load Switch in Notebook
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current:...
