FDMC612PZ Datasheet Text
FDMC612PZ P-Channel PowerTrench® MOSFET
FDMC612PZ
P-Channel PowerTrench® MOSFET
-20 V, -14 A, 8.4 mΩ
October 2013
Features
General Description
- Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A
- Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Termination is Lead-free and RoHS pliant
- HBM ESD capability level > 3.6 KV typical (Note 4)
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
- Battery Management
- Load Switch
8765
DD D D
S
D
SD
Pin 1
SD
1 234 Top
GS S S Bottom
Pin 1
G
D
MLP 3.3x3.3...