FDD8876 Key Features
- rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDD8870 | N-Channel PowerTrench MOSFET |
| FDD8870_F085 | N-Channel PowerTrench MOSFET |
| FDD8874 | N-Channel MOSFET |
| FDD8878 | N-Channel MOSFET |
| FDD8880 | N-Channel PowerTrench MOSFET |