FDD8874 Key Features
- rDS(ON) = 5.1mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 6.4mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDD8874 | N-Channel MOSFET |