FDD8870_F085 Key Features
- rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
- Qualified to AEC Q101
- RoHS pliant
- Part: FDD8870_F085
- Description: N-Channel PowerTrench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 353.69 KB
Other FDD8870_F085 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDD8870-F085 | N-Channel MOSFET |